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【英文标准名称】:Recommendedpracticeforspecifyingthyristor-controlledseriescapacitors
【原文标准名称】:规范晶闸管可控串联电容器的推荐实施规范
【标准号】:IEEE1534-2009
【标准状态】:现行
【国别】:美国
【发布日期】:2009
【实施或试行日期】:
【发布单位】:美国电气电子工程师学会(US-IEEE)
【起草单位】:IEEE
【标准类型】:()
【标准水平】:()
【中文主题词】:验收检验;电容器;补偿器(电气);冷却;电流互感器;定义;分配网;分布系统;配电变压器;电力变换器;电力系统;电抗器;电气工程;电气试验;电传动系统;电子工程;能量传输;使用条件;过电压保护装置;电力电容器;电力电子学;功率振荡器;合格试验;考核;可靠度;安全;安全要求;串联电容器;规范(验收);符号;试验;试验条件;半导体闸流管;类型;阀门
【英文主题词】:Acceptanceinspection;Capacitors;Compensators(electric);Cooling;Currenttransformers;Definitions;Distributionnetworks;Distributionsystems;Distributiontransformers;Electricconvertors;Electricpowersystems;Electricreactors;Electricalengineering;Electricaltesting;Electricaltransmissionsystems;Electronicengineering;Energytransmission;Operatingconditions;Overvoltageprotection;Powercapacitors;Powerelectronics;Poweroscillators;Qualificationtests;Rating;Reliability;Safety;Safetyrequirements;Seriescapacitors;Specification(approval);Symbols;Testing;Testingconditions;Thyristors;Types;Valves
【摘要】:
【中国标准分类号】:K42
【国际标准分类号】:31_060_70
【页数】:99P;A4
【正文语种】:英语


【英文标准名称】:Electronicdesignautomationlibraries-Part3:ModelsofintegratedcircuitsforEMIbehaviouralsimulation
【原文标准名称】:电子设计自动化程序库.第3部分:EMI行为模拟用集成电路的模型
【标准号】:IEC/TR62014-3-2002
【标准状态】:现行
【国别】:国际
【发布日期】:2002-12
【实施或试行日期】:
【发布单位】:国际电工委员会(IEC)
【起草单位】:IEC/TC93
【标准类型】:()
【标准水平】:()
【中文主题词】:输入;数字集成电路;电子设备及元件;电子设备及元件;规范(验收);集成电路;数字电路;定义;自动化
【英文主题词】:digitalintegratedcircuits;automation;emi;electronicequipmentandcomponents;input;integratedcircuits;definition;digitalcircuits;definitions;specification(approval)
【摘要】:TheobjectiveofthisTechnicalReport(TR)ICEM(IntegratedCircuitElectricalModel)forComponentsistoproposeelectricalmodellingforintegratedcircuitinternalactivities.Thismodelwillbeusedtoevaluateelectromagneticbehaviourandperformancesofelectronicequipment.1GeneralIntegratedcircuitsintegratemoreandmoregatesonsiliconandthetechnologiesarefasterandfaster.Topredicttheelectromagneticbehaviourofequipment,itisrequiredtomodelICinterfaceswitchingandtheirinternalactivitiesaswell.IndeedIBISandIMICmodelsarefocusedmainlyoninterfaceactivitypredictions(cross-talk,overshoot,etc.).SeeIEC62014-1.ThisreportdescribesamodelforEMIsimulationduetoICinternalactivities.Thismodelgivesmoreaccuratelytheelectromagneticemissionsofelectronicequipmentbytakingintoaccounttheinfluenceofinternalactivities.ThismodelgivesgeneraldatawhichcouldbeimplementedindifferentformatsuchasIBIS,IMIC,SPICE,etc.DuringthedesignstageoftheapplicationthatwillexploittheIC,itbecomesusefultopredictandtopreventelectromagneticriskswiththeCADtool.AccurateICmodellingisnecessarytorunonthesesimulationtools.Threecouplingmechanismsoftheinternalactivitiesforemission(Figure1)areproposedintheICEMmodel:·conductedemissionsthroughsupplylines;·conductedemissionsthroughinput/outputlines;·directradiatedemissions.Thisreportproposesamodelthataddressesthosethreetypesofcouplinginasingleapproach.Theelementsofthemodelwouldbekeptassimpleaspossibletoeasetheidentificationandsimulationprocess.2PhilosophyThepurposeofthisreportistoprovidedatatoenableprinted-circuit-boardlevel(PCB)electromagnetictoolstocomputetheelectromagneticfieldsproducedbyintegratedcircuitsandtheirassociatedPCB.Thesedatacanbeextractedfrommeasurementmethods,asdescribedinIEC61967,orobtainedfromICsimulationtools.2.1OriginofparasiticemissionTheoriginofparasiticemissioninICisduetothecurrentflowingthroughalltheICgates(IvandIv)duringhightoloworlowtohightransitionsasshowninFigure2.Thecombinationofseveralhundredthousandsofgatesleadtoveryimportantpeaksofcurrent,mainlyatriseandfalledgesoftheclockcircuit.ForexampleFigure3plotsthenumberofgatesswitchingversusthetimeforanICintegrating1000000transistors.Consequently,highcurrentspikesarecreatedinsidethedieandinducevoltagedropsoftheinternalvoltagereferences.2.2Conductedemissionthroughpower-supplylinesThecurrentspikescreatedinsidethediearepartiallyreducedthankstotheon-chipdecouplingcapacitance.Anyhow,asignificantportionofthecurrentspikesispresentatthepower-supplypinsofthechip.ThiscurrentcouldbemeasuredaccordingtoIEC61967orothermethodspermittingtohavethepower-supplycurrents.2.3Conductedemissionsthroughinput/outputlines(I/O)TheinternalvoltagedropsgeneratedbythecurrentspikescreatenoiseontheI/Osthroughdirectconnection,parasiticcapacitiveandinductivecouplingsand/orthroughcommonimpedance.ThePCBwiresconnectedtotheI/Ocanactasantennasandpropagateelectromagneticemissions.Themeasurementset-upisdoneaccordingtoIEC61967.2.4DirectradiatedemissionsTheinternalcurrentflowinginlowimpedanceloopsgenerateselectromagneticfieldswhichcanbemeasuredinnearfieldaccordingtoIEC61967.
【中国标准分类号】:L77
【国际标准分类号】:35_240_50;31_200;25_040_01
【页数】:20P.;A4
【正文语种】:英语